SK hynix has supplied HBM4E samples to major customers, marking the start of competition for leadership in next-generation AI memory. The move follows Samsung Electronics' delivery of HBM4E samples last month.
On June 18, SK hynix announced that it had provided 12-layer samples of its next-generation High Bandwidth Memory (HBM) product, HBM4E, to key customers.
HBM4E is the successor to HBM4, which will be used in NVIDIA's upcoming Vera Rubin AI accelerator scheduled for release later this year. HBM4E is expected to be featured in the Vera Rubin Ultra platform set to launch next year.
SK hynix's HBM4E delivers data transfer speeds of up to 16Gbps per pin and a capacity of 48GB, matching the performance of rival products. Compared with HBM4, the new memory improves energy efficiency by 20% and thermal resistance by 17%.
While previous HBM products through HBM4 were based on the company's fifth-generation 10nm-class (1b) DRAM, HBM4E adopts sixth-generation 10nm-class (1c) DRAM, enabling higher density and improved power efficiency.
The company also applied its Advanced MR-MUF packaging technology, which enhances structural stability and heat dissipation by filling the gaps between stacked memory chips with protective molding material.
In addition, HBM4E incorporates the latest interface technology and design optimizations, reducing data transfer latency and ensuring stable operation in high-bandwidth environments.
Samsung Electronics and SK hynix are accelerating development efforts as they compete in the emerging HBM4E market. Samsung began mass production shipments of HBM4 earlier this year and supplied HBM4E samples to customers last month, while SK hynix is leveraging its experience across HBM3, HBM3E, and HBM4 products and its close customer relationships to strengthen its market position.
“Leveraging our accumulated HBM development expertise and manufacturing know-how, we were able to deliver 12-layer HBM4E samples to customers,” an SK hynix spokesperson said. “We will work closely with key customers to ensure timely mass production.”
Ahn Hyun, President and Chief Development Officer (CDO) of SK hynix, said the company would continue to build on its industry-leading technology and manufacturing capabilities with HBM4E, reinforcing its position as a full-stack AI memory creator and advancing AI innovation through close collaboration with partners.
