Hyundai Mobis is accelerating its internalization of automotive semiconductors by securing a series of proprietary patents and establishing a dedicated task force in silicon carbide (SiC) power semiconductors, a core component for next-generation electric vehicles. The roadmap announced last year by Lee Gyu-suk, president of Hyundai Mobis—aiming for “mass production of power semiconductors by 2026” and “10% localization of automotive semiconductors by 2030”—has moved beyond preliminary research into the stage of practical mass production process optimization.
According to Hyundai Mobis' half-year report for 2026 on August 24, the company registered a series of core patents related to power semiconductors in the first half of this year, including “Silicon Carbide (SiC) Trench Gate Power Semiconductor Device and Manufacturing Method” (February), as well as “Power Semiconductor Device and Chip Manufacturing Method” and “Metal Clip for Power Module” (May).
The SiC trench device patent is a foundational technology secured after approximately four years of research and development. It is a core next-generation power semiconductor structural technology that reduces power loss and miniaturizes chip size in high-voltage, high-efficiency operating environments.
Hyundai Mobis has also reorganized its structure to connect R&D achievements to actual mass production. In June, Hyundai Mobis hired Vice President Lee Gyu-hyun, formerly of onsemi, a leading global power semiconductor company, and established the “IGBT Mass Production Technology Optimization TFT” under his direction. This measure aims to boost process yield early and stabilize quality for insulated-gate bipolar transistors (IGBTs) and SiC power semiconductors ahead of their mass production application.
Hyundai Mobis stated in its half-year report, “In the power semiconductor sector, we are designing silicon (Si) and SiC power semiconductors—which are core inverter components—in-house, and building a mass production system through partnerships with domestic foundries.” The company added, “Through this, we are strengthening our technological competitiveness based on our capability for vertical integration of electrification systems spanning 'motor-inverter-power module-power semiconductor.'”
This move is an extension of Hyundai Mobis' medium- to long-term semiconductor self-reliance strategy. Following its decision in March last year to establish an automotive semiconductor research hub in Silicon Valley, US, Hyundai Mobis hosted the 1st Automotive Semiconductor Forum (ASK) in September of the same year and built a cooperative framework with 23 domestic fabless and foundry companies and institutions.
SiC power semiconductors installed in electric vehicle inverters significantly reduce power loss compared to existing silicon (Si) semiconductors and offer superior high-temperature and high-voltage durability, making them a core component for extending electric vehicle driving range and improving energy efficiency. Although more than 90% of these components have relied on a small number of foreign companies in the US, Europe, and Japan, the stability of the Hyundai Motor Group's electrification supply chain is expected to be further strengthened as Hyundai Mobis' in-house design and mass production network take concrete shape.
An industry official said, “Hyundai Mobis' internalization of power semiconductors goes beyond simple component development and serves as the key to completing the vertical integration of Hyundai Motor Group's electrified powertrain,” adding, “As the company steadily equips itself with a mass production optimization organization and foundational patents according to its roadmap, its technological competitiveness during the transition to electrification will become even sturdier.”
