Samsung Electronics has won two awards at the 'FMS 2026 (Future of Memory and Storage)', the world's largest memory and storage conference.
At the FMS 2026 'Best of Show Awards' held in Santa Clara, California, Samsung received the '3D & NAND Innovation Award' for its 'V10 BV-NAND' and the 'Next-Gen Memory Award' for its 'LPDDR5X-PIM'.
The V10 BV-NAND is a next-generation V-NAND technology that achieves an ultra-high 400+ layer stacking structure. It applies Bonding Vertical (BV) technology, which vertically bonds wafers, and a 3-stack structure that connects V-NAND cells in three layers. Compared to the previous generation (V9), it improves memory density by approximately 58% and enhances read/write performance and power efficiency, making it a core technology to address the explosive data storage demands of the AI era.
The LPDDR5X-PIM is the world's first product to integrate Processing-in-Memory (PIM) technology into LPDDR5X, a low-power DRAM. It performs computations directly within the memory and sends only the results to the processor, minimizing data movement within the system and simultaneously improving performance and power efficiency. It is expected to be highly utilized in fields requiring low power and high performance, such as AI accelerators and high-performance computing (HPC).
Samsung Electronics plans to showcase its next-generation memory roadmap, AI memory solutions, and next-generation storage technologies at FMS 2026, which runs until the 6th (local time).
